1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c45a i c110 t c = 110 c26a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 64 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 140 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s v isol 50/60 hz, rms, t = 1minute leads-to-tab 2500 v weight 6g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i t , v ge = 15 v (see note 1) 2.1 2.5 v 98651a (7/00) ixgr 32n60c v ce = 600 v i c25 = 45 a v ce(sat)typ = 2.1 v t fi typ = 55 ns hiperfast tm igbt lightspeed series isoplus247 tm package (electrically isolated back side) g = gate, c = collector, e = emitter * patent pending isoplus 247 tm e153432 g c e isolated backside* features dcb isolated mounting tab meets to-247ad package outline high current handling capability latest generation hdmos tm process mos gate turn-on - drive simplicity applications uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages easy assembly high power density very fast switching speeds for high frequency applications ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i t ; v ce = 10 v, 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 190 pf c res 50 pf q g 110 nc q ge i c = i t , v ge = 15 v, v ce = 0.5 v ces 22 nc q gc 40 nc t d(on) 25 ns t ri 20 ns t d(off) 85 ns t fi 55 ns e off 0.32 mj t d(on) 25 ns t ri 25 ns e on 0.30 mj t d(off) 110 170 ns t fi 105 160 ns e off 0.85 1.25 mj r thjc 0.90 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = i t , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 150 c i c = i t , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgr 32n60c note 1: i t = 32a isoplus 247 (ixgr) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 s 13.21 13.72 .520 .540 t 15.75 16.26 .620 .640 u 1.65 3.03 .065 .080 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.50 0.75 1.00 1.25 1.50 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v t j = 25 c v ge = 15v t j = 25 c i c = 16a i c = 32a i c = 64a t j = 125 c f = 1mhz 5v 5v v ge = 15v t j = 25 c t j = 125 c 7v 9v 5v 7v 9v v ge = 15v 13v c iss c oss c rss 11v 11v fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves ixgr 32n60c
4 - 4 ? 2000 ixys all rights reserved fig. 11. transient thermal resistance ixgr 32n60c pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 255075100125 v ge - volts 0 4 8 12 16 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 e (on) - millijoules 0 1 2 3 4 i c - amperes 0 20406080 e (off) - millijoules 0 1 2 3 4 e (on) - millijoules 0.00 0.25 0.50 0.75 1.00 v ce = 300v i c = 16a i c = 32a e (on) e (off) e (off) t j = 125c r g = 4.7 dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 t j = 125c 64 e (on) i c = 64a e (off) t j = 125c e (on) i c = 32a e (on) e (off) fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area
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